Advanced high-k dielectric stacks with polySi and metal gates: Recent progress and current challenges
نویسندگان
چکیده
The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-j dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-j dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed.
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ورودعنوان ژورنال:
- IBM Journal of Research and Development
دوره 50 شماره
صفحات -
تاریخ انتشار 2006